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| 2SD1088 GENERAL DESCRIPTION SILICON NPN TRIPLE DIFFUSED TRANSISTOR High voltage switching application. Igniter application. QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 300 250 6 30 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 - IF = 4.5A ICsat = 4.5A; f = 16KHz - LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot T stg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - MAX 300 250 6 1 30 150 150 UNIT V V A A W Tmb 25 ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE1 hFE2 Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain DC current gain Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB =300V; VE =0 VEB =5V, Ic =0 Ic =0.5A, L=40mH IC = 4A; IB = 0.04A IC = 4A, VCE = 2V IC = 2A; VCE = 2V VCB = 10V MIN 250 200 2000 MAX 0.5 0.5 2..0 1 8 5 UNIT mA mA V V pF us us us Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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